Description: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
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EAN: 9780367574369
UPC: 9780367574369
ISBN: 9780367574369
MPN: N/A
Item Length: 25.4 cm
Number of Pages: 392 Pages
Publication Name: Nitride Wide Bandgap Semiconductor Material and Electronic Devices
Language: English
Publisher: Taylor & Francis Ltd
Item Height: 254 mm
Subject: Engineering & Technology, Physics
Publication Year: 2020
Type: Textbook
Item Weight: 771 g
Subject Area: Material Science, Manufacturing Engineering
Author: Jin Feng Zhang, Jin Cheng Zhang, Yue Hao
Item Width: 178 mm
Format: Paperback
