Description: Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage 'Vds': 100 V Maximum Gate-Source Voltage 'Vgs': 20 V Maximum Gate-Threshold Voltage 'Vgs(th)': 4 V Maximum Drain Current 'Id': 19 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 61 nC Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm Package: TO-220 - Advanced Process Technology - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - P-Channel - Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Package Included: 10 x IRF9540 IRF9540N P-Channel Power MOSFET 23A 100V TO-220
Price: 7.92 USD
Location: Villa Park, Illinois
End Time: 2024-10-26T22:08:26.000Z
Shipping Cost: N/A USD
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Item Specifics
Return shipping will be paid by: Seller
All returns accepted: Returns Accepted
Item must be returned within: 30 Days
Refund will be given as: Money Back
Number of Elements per Chip: 1
Mounting Style: Through-Hole
Number of Pins: 3
Series: IRF9540
Type: P-Channel Enhancement Mode MOSFET
Transistor Category: Power Transistor
MPN: Does Not Apply
Packaging: Bag
Brand: International Rectifier
Package/Case: TO-220
